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| APTGT75DH120TG Asymmetrical - Bridge Fast Trench + Field Stop IGBT(R) Power Module VBUS VBUS SENSE Q1 G1 CR3 VCES = 1200V IC = 75A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS SENSE NT C1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C V W Reverse Bias Safe Operating Area 150A @ 1150V APTGT75DH120TG - Rev 1 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 July, 2006 Max ratings 1200 110 75 175 20 357 Unit V A APTGT75DH120TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 Max 250 2.1 6.5 400 Unit A V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 4.7 VGE = 15V Tj = 125C VBus = 600V IC = 75A Tj = 125C R G = 4.7 Min Typ 5340 280 240 260 30 420 70 285 50 520 90 7 Max Unit pF ns ns mJ 8.1 Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 75A di/dt =2000A/s C mJ www.microsemi.com 2-5 APTGT75DH120TG - Rev 1 July, 2006 IF = 75A VR = 600V 75 1.5 1.4 150 250 7 13.5 3.7 7.2 2.0 V ns APTGT75DH120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.35 0.48 150 125 125 4.7 160 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 2.5 V C N.m g SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT75DH120TG - Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : July, 2006 APTGT75DH120TG Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 150 125 TJ =125C 150 125 IC (A) T J=25C T J = 125C VGE =17V VGE =13V VGE=15V VGE =9V 100 IC (A) 100 75 50 25 0 75 50 25 0 0 1 2 V CE (V) 3 4 0 1 2 VCE (V) 3 4 Transfert Characteristics 150 125 100 IC (A) 75 50 25 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 16 14 12 E (mJ) IC (A) 10 8 6 4 2 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 V CE = 600V V GE =15V I C = 75A T J = 125C Er Eoff Eoff Eon TJ=125C TJ =25C T J=125C Energy losses vs Collector Current 16 14 12 E (mJ) 10 8 6 4 2 0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150 125 100 75 50 25 0 0 400 800 VCE (V) 1200 1600 VGE=15V T J=125C RG=4.7 Er VCE = 600V VGE = 15V RG = 4.7 T J = 125C Eoff Eon Er 100 125 150 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse IGBT www.microsemi.com 4-5 APTGT75DH120TG - Rev 1 July, 2006 APTGT75DH120TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 ZCS ZVS VCE=600V D=50% RG =4.7 TJ=125C Forward Characteristic of diode 200 175 150 125 IF (A) 100 75 50 TJ=125C T J=125C TJ =25C Tc=75C 20 10 0 0 20 40 60 IC (A) 80 100 120 Hard switching 25 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.9 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT75DH120TG - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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